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เนื้อหาย่อ : device is very new, a book about it often becomes inv all sorts of details concerning its physics and its physical construction. In addition, since there has not yet been time to decide which methods of analysis will turn out to be most profitable, the author must present a good bit of material that later turns out to be unnecessary. Now that the junc- tion transistor has been in large-scale use for over five years, the time seems ripe to attempt a book in which some of these pitfalls are avoided. This book is concerned with presenting the basic methods of analysis involved in the design and understanding of junction transistor circuitry. is not a text in solid-state physics or transistor construction, just a compilation of a large number of transistor circuits. The transistor s employed in this analysis are restricted to a small number tha all easily interrelated. Initially, the simple low-frequency models are esented and are related to the underlying physical processes that in the device. Only after the reader is completely familiar with these simple models are the complications, such as high-frequency effects, noise, or saturation effects, introduced. with a background for understanding the dependence of the various he physics outlined in Chapter 1 serves to provide the circuit lel parameters on temperature, operating conditions, and tra construction material. With this understanding, the designer will be able to make rational estimates of the changes that will occur in his circuits with changes in any of the quantities. If one is completely new to the transistor field, he will perhaps find it ost reasonable first to start with the simple small-signal n pter 2, and then to return to Chapter 1 to see the physical bas models and to obtain an introductory acquaintance with some of the physi- I phenomena involved in junction transistor operation. Then a ceeds through the rest of the material, he can return to Chapter 1 as the need for more physical information arises. Chapter 3 contains a unified approach to transistor biasing problems. After a presentation of the ideas common to all biasing circuits, the special problems introduced by temperature effects are analyzed in some detail. hapter 4 combines the small-signal models with the biasing inf to produce practical small-signal amplifiers. Chapter 5 treats power amplifiers, while Chapter 6 considers regulated-power-supply circuits.