ข้อมูลทรัพยากร

Reinforced Concrete Slabs.
ประเภททรัพยากร : หนังสือเล่ม
ชั้นเก็บ : ตู้10 ชั้น 2 ฝั่งขวา
หมวด : 600
เลขหมู่หนังสือ : 624.18324
สำนักพิมพ์ : John Wiley & Sons.
ผู้แต่ง : Park, R.
ยอดคงเหลือ : 1
เนื้อหาย่อ : Preface
In the late 50s and early 60s, field-effect transistors were
a novelty. Originally, only two companies in the U.S. (Crys-
talonics and Texas Instruments) manufactured them. By 1963,
the list of suppliers had grownonly four (Amelco and Siliconix
joining the original two). But in 1964, the FET suddenly came
of age. By the end of 1964, about 20 semiconductor-device
manufacturers either were selling FETs or had them indevel-
opment.
There were a number of reasons for the sudden rise in the
FET's popularity. In the beginning, the FET had been used
mainly in linear amplifiers. But by early 1964, its charac-
teristics had improved sufficiently to allow its use in analog
switching applications. Also in 1964, Metal-Oxide-Semicon-
ductor (MOS) FETs became commercially available for the
frst time. The MOSFETs, offering good low-noise perform-
ance and input impedances of 1015 ohms (as compared to 10 10
ohms for junction FETs), caught on quickly.
By 1966, FET prices had dropped below $1. 00, and FET use
was continuing to grow. Recognizing the widespread interest
in FETs, in March of 1966, EEE Magazine conducted an ap-
plications clinic on FETs in New York attended by 200 engi -
neers. Since then, EEE also has published a number of arti-
cles on designing with FETs. The clinic papers and the supple-
mentary EEE articles have been combined in this book to pro-
vide a ready reference for the FET circuit designer.
In the firstedition, the chapters wereorganized so that basic
FET characteristics were discussed in the early Chapters,
linear applications were dealt with in the following Chapters
and then chopper and switching circuits were treated. FETs
in the integrated circuits and photo-FETs were also covered.
The second edition retains the 23 chapters of the first edi-
tion butincorporates, beginningwith Chapter 24, new material
based on articles recently publis hed in EEE Magazine.