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R.C.A. Intergrated Circuits.
ประเภททรัพยากร : หนังสือเล่ม
ชั้นเก็บ : ตู้ 9 ชั้น 3 ฝั่งซ้าย
หมวด : 600
เลขหมู่หนังสือ : 621.38173
สำนักพิมพ์ : Somerville.
ผู้แต่ง : R.C.A. Intergrated Circuits.
ยอดคงเหลือ : 1


เนื้อหาย่อ : COS/MOS INTEGRATED CIRCUITS Handing All COS/MOS gate inputs have a resistor/diode gate protection network. All transmission gate inputs and all outputs have diode protection provided by inherent p-n junction diodes. These diode networks at input and output interfaces protect COS/MOS devices from gate-oxide failure in handling environments where static discharge is not excessive. In low-temperature, low-humidity environments, improper handling may result in device damage. See ICAN-6000, "Handling and Operating Considerations for MOS Integrated Circuits'', for proper handling procedures. Operating Unused Inputs All unused input leads must be connected to either Vss or VDD, whichever is appropriate for the logic circuit involved. A floating input on a high-current type, such as the CD4049 or CD4050, not only can result in faulty logic operation, but can cause the maximum power dissipation of 200 milliwatts to be exceeded and may result in damage to the device. Inputs to these types, which are mounted on printed-circuit boards that may temporarily become unterminated, should have a pull-up resistor to VSS or VDD useful range of values for such resistors is from 10 kilohms to 1 megohm. Input Signals Signals shall not be applied to the inputs while the device power supply is off unless the input current is limited to a steady state value of less than 10 milliamperes. Input currents of less than 10 milliamperes prevent device damage; however, proper operation may be impaired as a result of current flow through structural diode junctions. Output Short Circuits Shorting of outputs to VSS or VDD can damage many of the higher-output-current COS/MOS types, such as the CD4007, CD4041, CD4049, and CD4050. In general, these types can all be safely shorted for supplies up to 5 volts, but will be damaged (depending on type) at higher power-supply voltages. For cases in which a short-circut load, such as the base of a p-ri-p or an n-p-n bipolar transistor, is directly driven, the device output characteristics given in the published data should be consulted to determine the requirements for a safe operation below 200 milliwatts. For detailed COS/MOS IC operating and handling considerations, refer to Application Note ICAN-6000 "Handling and Operating Considerations for MOS Integrated Circuits".