ข้อมูลทรัพยากร

Mos and Special-Purpose Bipolar Intergrated Circuits and R-F Power Transistor Circuit Design.
ประเภททรัพยากร : หนังสือเล่ม
ชั้นเก็บ : ตู้ 9 ชั้น 4 ฝั่งซ้าย
หมวด : 600
เลขหมู่หนังสือ : 621.3815304
สำนักพิมพ์ : Mc Graw-Hill.
ผู้แต่ง : Norris, Bryan.
ยอดคงเหลือ : 1
เนื้อหาย่อ : The aim of this book is to provide up to date information on a broad range of semiconductors, and to give
straightforward examples of how the devices may be used in practice. All the chapters have therefore been
written by practising professional engineers with these aims in view.
The chapters in this book on Circuit Design cover a wide range of semiconductor devices and I have grouped
them into broad device-type sections. These are MOS Integrated Circuits, Special Purpose Bipolar Integrated
Circuits, Field Effect Transistors and Radio Frequency Power Transistors. The first chapter of each section
is of an introductory nature.
In the first section on MOS I.C.s the Applications Chapters cover what are, in my opinion, the most
important areas: Memory, Terminals, Computational and Interconnecting or Interfacing with other devices.
A wide range of special bipolar integrated circuits exists today but only a small number of their
applications can be described. However, the spectrum is covered from circuits which are mainly digital
with linear peripherals, such as Line Drivers and Receivers and Read-Only Memories, to completely linear
circuits, such as the Double Balanced Mixer and the Audio Power Amplifier.
The major areas in which the FET is used, i.e. R.F. applications, high impedance and switching or
chopping' circuits, are described in specific chapters of the third section.
Finally, the chapters of the fourth section explain the use of power transistors in tuned and single-
sideband amplifiers and as frequency multipliers.
I should like to thank all the authors - for without their efforts this book would obviously not
exist - and in particular, my colleague, David Bonham, for his help in tying up the loose ends.