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Semiconductor Measuremets and Instrumentation.
ประเภททรัพยากร : หนังสือเล่ม
ชั้นเก็บ : ตู้ 9 ชั้น 4 ฝั่งขวา
หมวด : 500
เลขหมู่หนังสือ : 537.622
สำนักพิมพ์ : Texas Instruments Incorporated.
ผู้แต่ง : Runyan, W. R.
ยอดคงเหลือ : 1


เนื้อหาย่อ : In the course of twenty years, since the introduction of the first commercial silicon transistor, semiconductor evaluation has progressed from some rather simple lifetime, Hall, and resistivity measurements and quite insensitive chemical analyses to very elegant analytical procedures and extremely sophisticated equipment for measuring the various electrical properties. In addition, the ability to detect and to appreciate the myriads of crystallographic defects which may appear in semiconductors has improved manyfold in that same twenty years. Keeping pace with this has been the literature, which regularly reports new methods or refinements of older ones and has by now reached major proportions. My hope in preparing this book is that it will provide a guide through that maze of literature and methods that have accumulated so that the most appropriate technique for a particular problem may be chosen, and that the directions will be precise enough for most bulk measurements to be made without difficulty. It was written principally for semiconductor process engineers, failure analysis labora- tory personnel, and university students faced with measuring the properties of semiconductors. However, many of the procedures are applicable to other materials as well. The depth of treatment varies from topic to topic, depending not only on its importance to the business of semiconductors, but also on the availability of background reading and how dependent some particular method is on techniques that develop only with usage, but which are seldom written down. In addition, there are hopefully enough references provided about the more important device-oriented measurements to direct the reader to them as well. I wish to express my appreciation to the many people who helped in the prepara- tion of this book. Mr. Stacy Watelski (Texas Instruments) coauthored Chap. 7, supplied various photographs, and generally provided useful comments. Dr. Murray Bullis (NSB), Dr. Lyndon Taylor (Univ. of Texas), Dr. W. F. Keenan, and G. P. Pollack, and Messrs A. N. Akridge, Andreas Niewold, and A. F. Polack (all of Texas Instruments) critically read various chapters. Mrs. Hettie Smith typed the manuscript as it went through its many iterations, and my daughter Kay assisted with the proofreading.